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PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 03 -- 11 November 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Electrostatically robust due to integrated protection diodes Saves PCB space due to small footprint Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources
1.3 Applications
High-speed line drivers Relay drivers
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tsp = 25 C; VGS = 10 V; see Figure 1 and 3 Tsp = 25 C; see Figure 2 Min Typ Max 60 260 0.56 Unit V mA W drain-source voltage Tj 25 C; Tj 150 C drain current total power dissipation gate-drain charge total gate charge Symbol Parameter
Dynamic characteristics QGD QG(tot) VGS = 10 V; ID = 0.5 A; VDS = 48 V; Tj = 25 C; see Figure 11 VGS = 4.5 V; ID = 200 mA; Tj = 25 C; see Figure 9 and 10 VGS = 10 V; ID = 500 mA; Tj = 25 C; see Figure 9 and 10 0.07 0.85 nC nC
Static characteristics RDSon drain-source on-state resistance 3.8 5.3
-
2.8
4.5
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol G S D Description gate source drain
G
Simplified outline
3
Graphic symbol
D
1
2
SOT323 (SC-70)
S
03ab60
3. Ordering information
Table 3. Ordering information Package Name PMF3800SN SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 4. Marking codes Marking code[1] FK* Type number PMF3800SN
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj
PMF3800SN_3
Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature Tsp = 100 C; VGS = 10 V; see Figure 1 Tsp = 25 C; VGS = 10 V; see Figure 1 and 3 Tsp = 25 C; tp 10 s; pulsed; see Figure 3 Tsp = 25 C; see Figure 2 Conditions Tj 25 C; Tj 150 C Tj 25 C; Tj 150 C; RGS = 20 k Min -15 -55 -55 Max 60 60 15 165 260 560 0.56 150 150 Unit V V V mA mA mA W C C
In accordance with the Absolute Maximum Rating System (IEC 60134).
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
2 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
Table 5. Symbol IS ISM VESD
Limiting values ...continued Parameter source current peak source current electrostatic discharge voltage Conditions Tsp = 25 C Tsp = 25 C; tp 10 s; pulsed HBM; C = 100 pF; R = 1.5 k Min Max 280 560 1 Unit mA mA kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Electrostatic discharche voltage
120 Ider (%) 80
03aa25
120 Pder (%) 80
03aa17
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 Tsp (C) 200
Fig 1.
Normalized continuous drain current as a function of solder point temperature
1 Limit RDSon = VDS / ID
Fig 2.
Normalized total power dissipation as a function of solder point temperature
03ap26
tp = 10 s 100 s
ID (A) 10-1
1 ms DC 10-2 10 ms 100 ms
10-3 1 10 VDS (V)
102
Fig 3.
PMF3800SN_3
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
3 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
6. Thermal characteristics
Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter Conditions Min Typ Max 220 Unit K/W thermal resistance from see Figure 4 junction to solder point
103 Zth(j-sp) (K/W) 102 = 0.5 0.2 0.1 0.05 0.02 10 single pulse
03ap25
P
=
tp T
tp
t T
1 10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
4 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 10 A; VGS = 0 V; Tj = -55 C ID = 10 A; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = 150 C; see Figure 7 and 8 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 7 and 8 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 7 and 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 48 V; VGS = 0 V; Tj = 25 C VDS = 48 V; VGS = 0 V; Tj = 150 C VGS = -10 V; VDS = 0 V; Tj = 25 C VGS = 10 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 500 mA; Tj = 150 C; see Figure 9 and 10 VGS = 4.5 V; ID = 200 mA; Tj = 25 C; see Figure 9 and 10 VGS = 10 V; ID = 500 mA; Tj = 25 C; see Figure 9 and 10 V(BR)GSS gate-source breakdown VDS = 0 V; Tj = 25 C; IG = -1 mA voltage Tj = 25 C; IG = 1 mA; VDS = 0 V total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time turn-off time turn-on time source-drain voltage reverse recovery time recovered charge VDS = 50 V; VGS = 10 V; RG(ext) = 50 ; RGS = 50 ; Tj = 25 C; RL = 250 VDS = 50 V; RL = 250 ; VGS = 10 V; RG(ext) = 50 VDS = 10 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 12 ID = 0.5 A; VDS = 48 V; VGS = 10 V; Tj = 25 C; see Figure 11 Min 55 60 0.6 1 16 16 Typ 2 50 50 5.2 3.8 2.8 22 22 0.85 0.55 0.07 13 8 4 9 3 0.93 30 30 Max 3.5 3.3 1 10 500 500 8.4 5.3 4.5 40 30 10 1.5 Unit V V V V V A A nA nA V V nC nC nC pF pF pF ns ns ns ns ns ns V ns nC
Static characteristics
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf toff ton VSD trr Qr
Source-drain diode IS = 300 mA; VGS = 0 V; Tj = 25 C; see Figure 13 IS = 300 mA; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V; Tj = 25 C
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
5 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
0.5 ID (A) 0.4
03an70
Tj = 25 C
0.5 ID (A)
03an72
VGS (V) = 10
6.0
VDS > ID x RDSon
4.5
0.4
0.3
4.0
0.3
0.2
3.5
0.2
0.1
3.0
0.1
150 C
Tj = 25 C
0 0 0.5 1.0 1.5 VDS (V) 2.0
0 0 2 4 VGS (V) 6
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
4
03aa34
Fig 6.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
03aa37
10-1 ID (A)
VGS(th) (V) max 3
10-2
10-3
2
typ
10-4
min
typ
1
min
10-5
0 -60
10-6
0
60
120
Tj (C)
180
0
0.6
1.2
1.8 VGS (V)
2.4
Fig 7.
Gate-source threshold voltage as a function of junction temperature
Fig 8.
Sub-threshold drain current as a function of gate-source voltage
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
6 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
10 RDSon () 8 4.0 6 VGS (V) = 3.5
03an71
Tj = 25 C a
2.4
03aa28
1.8
4.5 1.2 4 6.0 10 0.6 2
0 0 0.1 0.2 0.3 0.4 ID (A) 0.5
0 -60
0
60
120 Tj (C)
180
Fig 9.
Drain-source on-state resistance as a function of drain current; typical values
Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature
102
03aa46
15 VGS (V) 10
03ab09
C (pF) Ciss 10 Coss 5 Crss
0 0 0.3 0.6 0.9 QG (nC) 1.2
1 10-1
1
10 VDS (V)
102
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
7 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
0.5 IS (A) 0.4 VGS = 0 V
03an73
0.3
0.2 150 C 0.1 Tj = 25 C
0 0 0.3 0.6 0.9 VSD (V) 1.2
Fig 13. Source current as a function of source-drain voltage; typical values
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
8 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
8. Package outline
Plastic surface-mounted package; 3 leads SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC JEITA SC-70
EUROPEAN PROJECTION
ISSUE DATE 04-11-04 06-03-16
Fig 14. Package outline SOT323 (SC-70)
PMF3800SN_3 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
9 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
9. Revision history
Table 8. Revision history Release date 20091111 Data sheet status Product data sheet Change notice Supersedes PMF3800SN_2 Document ID PMF3800SN_3 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Maximum value added for VGS(th) @ Tj = 25 C in Characteristics table. Product data sheet Product data sheet PMF3800SN_1 -
PMF3800SN_2 (9397 750 20050701 15218) PMF3800SN_1 (9397 750 20050208 14255)
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
10 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
10.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
11. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMF3800SN_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 11 November 2009
11 of 12
NXP Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
12. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 November 2009 Document identifier: PMF3800SN_3

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